Influence of textured interfaces in the performance of a-Si:H double-junction solar cell

Author

Garcia-Rivera, A. ; ComesanÌƒa, E. ; Garcia-Loureiro, Antonio J. ; Valin, Raul ; Martinez, A.

Author_Institution

Centro Singular de Investig. en Tecnoloxias da Informacion, Univ. of Santiago de Compostela, Santiago de Compostela, Spain

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

3

Abstract

In this paper different roughness profiles of transparent conductive oxide (TCO) have been simulated to calibrate a thin-film hydrogenated amorphous silicon double-junction tandem solar cell (a-Si:H/a-Si:H) against the experimental data. The TCO texture was modelled using a periodic triangular profile. The width of the period was kept constant and the height is changed according to the simulated angle α. The optimum roughness for the a-Si:H/a-Si:H solar cell was obtained for α = 26°. For this angle, the current density-voltage (J-V) characteristic has a good agreement with the J-V experimental data. The optimum value of α is close to the characteristics of an Asahi U-type texture used in the manufacturing process for the TCO and it generates the maximum electron density in the intrinsic layers.

Keywords

amorphous semiconductors; silicon; solar cells; thin film devices; Asahi U-type texture; J-V experimental data; Si; TCO texture; a-Si:H double-junction solar cell; amorphous silicon double-junction tandem solar cell; current density-voltage characteristic; maximum electron density; periodic triangular profile; roughness profiles; thin-film hydrogenated solar cell; transparent conductive oxide; Absorption; Amorphous silicon; Educational institutions; Light trapping; Manufacturing processes; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865860

Filename

6865860