Title :
NBTI and HCD aware behavioral models for reliability analysis of analog CMOS circuits
Author :
Heidmann, Nils ; Hellwege, Nico ; Paul, Steffen ; Peters-Drolshagen, Dagmar
Author_Institution :
Inst. of Electrodynamics & Microelectron., Univ. of Bremen, Bremen, Germany
Abstract :
For safety-critical applications with long operational lifetimes the analysis of aging aspects caused by NBTI and HCD is moving into the focus of the designer. The increasing complexity of modern analog and mixed-signal circuits makes a reliability analysis on transistor level for complex systems quite challenging. In this paper we present a method using Box-Behnken Designs and Response Surface Modeling with exponential function interpolation. This approach enables accelerated reliability analysis on system level. A tool is introduced to support the behavioral model generation process. The derived model includes information on degradation and process variations. The method is demonstrated for a current-mirror and a CS amplifier to quantify the degradation influence. The accuracy of the behavioral models and the age-dependent yield of the circuits is determined.
Keywords :
CMOS analogue integrated circuits; ageing; hot carriers; integrated circuit modelling; integrated circuit reliability; interpolation; negative bias temperature instability; response surface methodology; Box-Behnken Designs; HCD aware behavioral models; NBTI; analog CMOS circuits; exponential function interpolation; hot carrier degradation; reliability analysis; response surface modeling; Adaptation models; Aging; Computational modeling; Degradation; Integrated circuit modeling; Mathematical model; Reliability; Aging; Analog Circuits; Behavioral Modeling; Reliability; Response Surface Modeling;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112779