• DocumentCode
    2713187
  • Title

    Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

  • Author

    Dyakonova, N. ; Fatimy, A.E. ; Meziani, Y. ; Otsuji, T. ; Coquillat, D. ; Knap, Wojciech ; Teppe, F. ; Vandenbrouk, S. ; Madjour, K. ; Theron, D. ; Gaquiere, C. ; Poisson, M.A. ; Delage, S.

  • Author_Institution
    GES, Univ. Montpellier 2, Montpellier, France
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.
  • Keywords
    aluminium compounds; gallium compounds; high electron mobility transistors; terahertz waves; AlGaN-GaN; emission frequency; gate voltage; high electron mobility transistors; terahertz radiation; tunable room temperature THz emission; Gallium nitride; HEMTs; Logic gates; MODFETs; Plasma temperature; Plasma waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612620
  • Filename
    5612620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2713187