Title :
Low-resistance ohmic contact to n-GaAs
Author :
Vald-Perlov, V.M. ; Veitz, V.V.
Author_Institution :
Pulsar, GUP NPP
Abstract :
A multi-layered AuGe-Ti-TiN-Ti-Au metallization has been researched to develop a low-resistance ohmic contact to n-GaAs. The value of the obtained specific contact resistance was (4.1+5.6)×10-7 ohm·cm and retained its stability after a five-hour treatment at 300°C.
Keywords :
contact resistance; germanium alloys; gold; gold alloys; heat treatment; ohmic contacts; stability; titanium; titanium compounds; 0.97 muohmcm; 300 C; GaAs; GaAs-AuGe-Ti-TiN-Ti-Au; heat treatment; low-resistance ohmic contact; multi-layered AuGe-Ti-TiN-Ti-Au metallization; n-GaAs; resistance stability; specific contact resistance; Argon; Contact resistance; Electrical resistance measurement; Gallium arsenide; Gold; Hafnium; Neodymium; Ohmic contacts; Organizing; Tin;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137189
