Title :
3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers
Author :
Courrèges, S. ; Giraud, S. ; Cros, D. ; Madrangeas, V. ; Aubourg, M.
Author_Institution :
XLIM UMR, Limoges
Abstract :
The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers
Keywords :
ferroelectric materials; ferroelectric thin films; method of lines; microwave devices; permittivity; dc electric field dependence; dynamic characterization; ferroelectric layers; ferroelectric materials; ferroelectric thin-film layers; method of line; permittivity; planar microwave devices; tunable planar devices; Electromagnetic analysis; Ferroelectric materials; Microstrip; Microwave devices; Microwave theory and techniques; Permittivity; Substrates; Thin film devices; Transistors; Voltage; 3D; Method of Line; characterization; ferroelectric thin-film; microwaves devices;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249921
