3D analysis of ferroelectric thin-film planar microwave devices using Method of Line : application to the dynamic characterization of ferroelectric layers

Author

Courrèges, S. ; Giraud, S. ; Cros, D. ; Madrangeas, V. ; Aubourg, M.

Author_Institution

XLIM UMR, Limoges

fYear

2006

fDate

11-16 June 2006

Firstpage

1037

Lastpage

1040

Abstract

The characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL) has been summarized in this paper and a method in order to dynamically characterize ferroelectric layers has been proposed. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. First, this paper presents results of 2D and 3D analysis of tunable planar devices and, next, the dynamic characterization of ferroelectric thin-film layers

Keywords

ferroelectric materials; ferroelectric thin films; method of lines; microwave devices; permittivity; dc electric field dependence; dynamic characterization; ferroelectric layers; ferroelectric materials; ferroelectric thin-film layers; method of line; permittivity; planar microwave devices; tunable planar devices; Electromagnetic analysis; Ferroelectric materials; Microstrip; Microwave devices; Microwave theory and techniques; Permittivity; Substrates; Thin film devices; Transistors; Voltage; 3D; Method of Line; characterization; ferroelectric thin-film; microwaves devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249921

Filename

4015096