High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs

Author

Wespel, M. ; Dammann, M. ; Polyakov, V. ; Reiner, R. ; Waltereit, P. ; Weiss, B. ; Quay, R. ; Mikulla, M. ; Ambacher, O.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2015

fDate

19-23 April 2015

Abstract

In this work we investigate the dispersion effects of GaN based HEMTs as a function of the off-state stress voltage and the stress time. We characterize the reduction of the drain current in on-state after off-state stress time from 2 μs up to 10 s. In addition, we compare different source- and gate-terminated field plate configurations. High-voltage (HV) pulsed stress tests with several stress rates are carried out to measure the increase of dynamic on-resistance over time. A new analytic model is developed to estimate the relevant trapping and detrapping time constants of the devices. By HV pulsed stress tests at different temperatures it is possible to estimate the activation energies for both processes.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; semiconductor device testing; stress analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; HV pulsed stress testing; detrapping time constant estimation; drain current; gate-terminated field plate configuration; high-voltage pulsed stress testing; high-voltage stress time-dependent dispersion effect; off-state stress voltage; source-terminated field plate configuration; time 2 mus to 10 s; trapping time constant estimation; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; Logic gates; MODFETs; Stress; AlGaN/GaN-on-Si; HEMT; current collapse; field plate; high voltage; on-resistance; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112787

Filename

7112787