Epitaxial growth of high quality InSb1-xNx by MOCVD

Author

Jin, Y.J. ; Wang, Y. ; Zhang, D.H. ; Tang, X.H. ; Zhang, B.L.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. of Univ., Singapore

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

InSb_1-xN_x was grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. The XRD measurement showed that the full width at half maximum (FWHM) of the sample is as low as 0.04, which indicates that the film behaves very high quality. Besides, lattice mismatch between InSb_1-xN_x layer and InSb substrate was also detected from the XRD results, indicating that the nitrogen has been successfully incorporated into InSb. According to this mismatch, we have calculated the N content in the layer. The sample band-gap was measured by Infrared transmission. Besides, XPS was also done to measure the N content in the InSb_1-xN_x and a relatively weak N peak was detected in the results.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; X-ray photoelectron spectra; antimony compounds; energy gap; indium compounds; infrared spectra; semiconductor epitaxial layers; semiconductor growth; InSb; InSb (100) substrate; InSb_1-xN_x; XPS; XRD measurement; band-gap; epitaxial growth; infrared transmission; lattice mismatch; metal-organic chemical vapor deposition; nitrogen incorporation; Epitaxial growth; Equations; Indium; Inductors; MOCVD; Nitrogen; Photonic band gap; Substrates; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781363

Filename

4781363