Title :
Epitaxial growth of high quality InSb1-xNx by MOCVD
Author :
Jin, Y.J. ; Wang, Y. ; Zhang, D.H. ; Tang, X.H. ; Zhang, B.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. of Univ., Singapore
Abstract :
InSb1-xNx was grown epitaxially on InSb (100) by metal-organic chemical vapor deposition. The XRD measurement showed that the full width at half maximum (FWHM) of the sample is as low as 0.04, which indicates that the film behaves very high quality. Besides, lattice mismatch between InSb1-xNx layer and InSb substrate was also detected from the XRD results, indicating that the nitrogen has been successfully incorporated into InSb. According to this mismatch, we have calculated the N content in the layer. The sample band-gap was measured by Infrared transmission. Besides, XPS was also done to measure the N content in the InSb1-xNx and a relatively weak N peak was detected in the results.
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; X-ray photoelectron spectra; antimony compounds; energy gap; indium compounds; infrared spectra; semiconductor epitaxial layers; semiconductor growth; InSb; InSb (100) substrate; InSb1-xNx; XPS; XRD measurement; band-gap; epitaxial growth; infrared transmission; lattice mismatch; metal-organic chemical vapor deposition; nitrogen incorporation; Epitaxial growth; Equations; Indium; Inductors; MOCVD; Nitrogen; Photonic band gap; Substrates; Temperature; X-ray scattering;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781363
