Influence of Oxide Aperture on the Properties of 1.3μm InAs-GaAs Quantum-Dot VCSELs

Author

Xu, D.W. ; Yoon, S.F. ; Tong, C.Z. ; Fan, W.J.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

A self-consistent model comprising rate equations and thermal conduction equation is used to analyze the influence of oxide aperture on thermal properties and output power of 1.3 mum InAs-GaAs quantum-dot (QD) vertical cavity surface emitting lasers (VCSELs). The results show the self-heating effect in QD VCSEL is very sensitive to the size of oxide aperture. The temperature increase at the active region of QD VCSEL is analyzed as the function of the size of oxide aperture. The highest power 3.6 mW can be achieved by modifying the diameter of aperture. It has been demonstrated that there exists an optimized size of oxide aperture for the highest output power.

Keywords

III-V semiconductors; gallium compounds; heat conduction; indium compounds; laser beams; quantum dot lasers; surface emitting lasers; thermal properties; InAs-GaAs; QD VCSEL; oxide aperture influence; power 3.6 mW; quantum-dot vertical cavity surface emitting laser active region; self-heating effect; thermal conduction equation; wavelength 1.3 mum; Apertures; Equations; Laser modes; Power generation; Power lasers; Quantum dots; Surface emitting lasers; Temperature sensors; Thermal conductivity; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781367

Filename

4781367