Linear Temperature Dependent Small Signal Model for InGaP/GaAs DHBTs Using IC-CAP

Author

Chitrashekaraiah, Sunil ; Van Tuyen Vo ; Rezazadeh, Ali A.

Author_Institution

Sch. of Electr. & Electron. Eng., Manchester Univ.

fYear

2006

fDate

11-16 June 2006

Firstpage

1093

Lastpage

1096

Abstract

This paper presents extensive measurements and extractions carried out on InGaP/GaAs double heterojunction bipolar transistors to achieve a simple linear temperature dependent small signal model applicable to CAD. Temperature effect on parasitic elements has been deduced in physical detail from this data. For the first time the conventional T-topology is extended to predict temperature behavior based on the linear expressions. Excellent agreement between measured and simulated data was observed

Keywords

III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; thermal analysis; IC-CAP; InGaP-GaAs; T-topology; double heterojunction bipolar transistors; equivalent circuits; linear approximation; linear expressions; semiconductor device modeling; simple linear temperature; small signal model; temperature behavior prediction; thermal factors; Double heterojunction bipolar transistors; Electromagnetic modeling; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Parameter extraction; Physics; Signal design; Temperature dependence; Equivalent Circuits; Heterojunction bipolar transistors; Linear approximation; Semiconductor device modeling; Thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249953

Filename

4015110