DocumentCode
2713581
Title
A Reliable Low Gate Bias Model Extraction Procedure for AlGaN/GaN HEMTs
Author
Chen, G. ; Kumar, V. ; Schwindt, R. ; Adesida, I.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana-Champaign, IL
fYear
2006
fDate
11-16 June 2006
Firstpage
1097
Lastpage
1100
Abstract
A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; HEMT; equivalent circuits; extracted parasitic components; high gate voltage; low gate bias model extraction; microwave devices; parasitic inductance; parasitic resistance; Aluminum gallium nitride; Circuit noise; Contact resistance; Equivalent circuits; Gallium nitride; HEMTs; Inductance; MODFETs; Parasitic capacitance; Voltage; Equivalent circuits; HEMT; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location
San Francisco, CA
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2006.249954
Filename
4015111
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