Title :
Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings
Author :
Filip, V. ; Nicolaescu, D. ; Wong, H. ; Chu, P.L.
Author_Institution :
Dept. of Electron. Eng. & Optoelectronics Res. Centre, City Univ. of Hong Kong, China
Abstract :
A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk, substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. "Resonant" behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature.
Keywords :
current density; dielectric thin films; electron field emission; nanostructured materials; substrates; tunnelling; coherent electron field emission; coherent tunneling; dielectric coverings; dielectric layer; emission current density; nanostructures; quasibound states; resonant behavior; semiconductor substrate; substrate conduction band; substrate-dielectric boundary; ultra-thin dielectric films; Brightness; Cathodes; Coatings; Dielectrics; Electron emission; Iron; Microelectronics; Optical devices; Potential energy; Protection;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1402808