• DocumentCode
    2713587
  • Title

    Model of coherent electron field emission from semiconductors through nanometer-wide dielectric coverings

  • Author

    Filip, V. ; Nicolaescu, D. ; Wong, H. ; Chu, P.L.

  • Author_Institution
    Dept. of Electron. Eng. & Optoelectronics Res. Centre, City Univ. of Hong Kong, China
  • Volume
    1
  • fYear
    2004
  • fDate
    4-6 Oct. 2004
  • Lastpage
    80
  • Abstract
    A model of coherent electron field emission from a semiconductor substrate through a very thin (nanometer-wide) dielectric layer is developed. The model includes a separate approach for the electron transmission from the bulk, substrate conduction band and from the quasi-bound states induced by the applied field at the substrate-dielectric boundary. No artificial quantization condition is used for the energies of the quasi-bound states. "Resonant" behavior is found in the total emission current density, which may give rise to consistent enhancement as compared to the emission from bare substrate surface, in accordance with other results in the literature.
  • Keywords
    current density; dielectric thin films; electron field emission; nanostructured materials; substrates; tunnelling; coherent electron field emission; coherent tunneling; dielectric coverings; dielectric layer; emission current density; nanostructures; quasibound states; resonant behavior; semiconductor substrate; substrate conduction band; substrate-dielectric boundary; ultra-thin dielectric films; Brightness; Cathodes; Coatings; Dielectrics; Electron emission; Iron; Microelectronics; Optical devices; Potential energy; Protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1402808
  • Filename
    1402808