DocumentCode
2713594
Title
INSBN Junction Diode Fabricated by Ion Implantation
Author
Chen, X.Z. ; Wang, Y. ; Zhang, D.H. ; Liu, W. ; Li, J.H.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear
2008
fDate
8-11 Dec. 2008
Firstpage
1
Lastpage
2
Abstract
InSbN photodiodes prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. Such devices are capable of mid- and long-wavelength infrared photodetection and potential candidates for terahertz radiation.
Keywords
III-V semiconductors; indium compounds; infrared detectors; ion implantation; magnesium; photodetectors; photodiodes; InSbN:Mg; ion implantation; junction diode; long wavelength infrared photodetection; nitrogen; photodiodes; terahertz radiation; Bonding; Diodes; Infrared detectors; Ion implantation; Monitoring; Nitrogen; P-n junctions; Photodiodes; Photonic band gap; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location
Singapore
Print_ISBN
978-1-4244-3901-0
Electronic_ISBN
978-1-4244-2906-6
Type
conf
DOI
10.1109/IPGC.2008.4781370
Filename
4781370
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