A Two-Kernel Nonlinear Impulse Response Model for Handling Long Term Memory Effects in RF and Microwave Solid State Circuits.

Accurate modeling of the memory effects in nonlinear RF and microwave devices is of prime importance in the design process for the new generations of communications systems. This is particularly important for the design of power amplifier, predistorter and linearizer, and the prediction of system intermodulation distortion as well as power budget. This paper extends previous works and provides a comprehensive mathematical foundation for envelope-domain and band-pass nonlinear impulse response of RF and microwave blocs. The new model shows significant accuracy improvements in modeling long-term memory effects, especially self-heating. Besides the paper presents a new kernel identification technique that is faster and more accurate as it requires only frequency-domain measurements or harmonic-balance simulation