The temperature dependence of electrical properties in N-doped InSb

Author

Wang, Y. ; Zhang, D.H. ; Liu, W.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.

Keywords

Hall effect; III-V semiconductors; annealing; carrier density; doping profiles; electrical conductivity; electrical resistivity; indium compounds; ion implantation; nitrogen; phonons; Hall effect measurement; InSb; InSb substrate; InSb:N; annealing temperature; electron carrier concentration; electron conduction; hole conduction; impurity activation energies; nitrogen doping level; nitrogen ion implantation; phonon scattering; resistivity; single band conduction; temperature 180 K to 300 K; Annealing; Charge carrier processes; Doping; Electric variables measurement; Hall effect; Nitrogen; Phonons; Scattering; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781374

Filename

4781374