Title :
A Near-Infrared Range Photodetector Based on Indium Nitride Nanocrystals Obtained Through Laser Ablation
Author :
Tekcan, Burak ; Alkis, Sabri ; Alevli, Mustafa ; Dietz, Nikolaus ; Ortac, Bülend ; Biyikli, N. ; Okyay, A.K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey
Abstract :
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under -1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as 3.05 × 10-2 mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes.
Keywords :
III-V semiconductors; absorption; chemical vapour deposition; indium compounds; infrared detectors; insulating thin films; laser ablation; leakage currents; nanosensors; nanostructured materials; photodetectors; pulsed laser deposition; semiconductor thin films; thin film sensors; wide band gap semiconductors; InN; NIR detection; chemical vapor deposition; electrical leakage current reduction; laser ablation; nanocrystalline thin film; nanocrystals; near infrared range photodetector; optically active absorption region; photoresponsivity; thin insulating film; ultrathin layer; wavelength 600 nm to 1100 nm; Educational institutions; Hafnium compounds; Indium; Laser ablation; Nanocrystals; Photodetectors; Plasmons; Photodetector; indium nitride; nanocrystals; near-infrared (NIR);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2336795
