Title :
Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT
Author :
Foro, L.L. ; Touboul, A.D. ; Michez, A. ; Wrobel, F. ; Rech, P. ; Dilillo, L. ; Frost, Christopher ; SaigneÌ, FreÌdeÌric
Author_Institution :
IES, Univ. Montpellier II, Montpellier, France
Abstract :
Single Event Burnout and Gate Rupture are catastrophic failures due to cosmic rays that can occur simultaneously. It is shown that negatively biasing the gate leads to a substantial increase of SEB cross section in particular when the collector voltage is closer to the safe operating area of the device.
Keywords :
cosmic rays; insulated gate bipolar transistors; neutron effects; radiation hardening (electronics); semiconductor device breakdown; cosmic rays; gate oxide breakdown; insulated gate bipolar transistors; neutron-induced SEB; single event burnout; single event gate rupture; trench gate fieldstop IGBT; Electric breakdown; Failure analysis; Insulated gate bipolar transistors; Logic gates; MOSFET; Neutrons; Substrates; Atmospheric neutrons; Single Event Burnout (SEB); Single Event Gate Rupture (SEGR); cross section; gate oxide breakdown; insulated gate bipolar transistor (IGBT); trench gate fieldstop;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2332813
