• DocumentCode
    2714565
  • Title

    Linear broadband GaN MMICs for Ku-band Applications

  • Author

    Schuh, P. ; Leberer, R. ; Sledzik, H. ; Schmidt, D. ; Oppermann, M. ; Adelseck, B. ; Brugger, H. ; Quay, Ruediger ; van Raay, Friedbert ; Seelmann-Eggebert, Matthias ; Kiefer, Rudolf ; Bronner, W.

  • Author_Institution
    EADS Deutschland GmbH, Ulm
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    1324
  • Lastpage
    1326
  • Abstract
    AlGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper. The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB and the output power at 1dB compression is in the range of 27dBm. Two-tone measurements show good linearity. Up to 26dBm output power the IM3 value is better than 30dBc. A reliable assembly process for the MMICs is necessary in order to achieve good thermal conductivity between the underlying SiC wafer substrate and the heatspreader beneath
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; assembling; gallium compounds; silicon; silicon compounds; thermal conductivity; wide band gap semiconductors; wideband amplifiers; 9 to 19 GHz; AlGaN-GaN-Si; HEMT MMIC; Ku-band applications; assembly technology; linear broadband MMIC; linear broadband amplifiers; microstrip technology; thermal conductivity; two-tone measurements; Aluminum gallium nitride; Assembly; Broadband amplifiers; Frequency; Gallium nitride; HEMTs; MMICs; Power generation; Silicon carbide; Thermal conductivity; AlGaN/GaN; Broadband amplifier; HEMTs; Linearity; MMICs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249475
  • Filename
    4015168