DocumentCode
2714570
Title
Terahertz detection and emission by field effect transistors: Influence of high magnetic fields and channel geometry
Author
Knap, Wojciech ; Coquillat, Dominique ; Teppe, Frederic ; Dyakonova, Nina ; Schuster, F. ; Klimenko, O.
Author_Institution
Univ. Montpellier 2, Montpellier, France
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
We review a few recent results concerning the physics and applications of FETs as Terahertz detectors and emitters. Particularly we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the FETs channel.
Keywords
field effect transistors; magnetic field effects; microwave devices; terahertz wave detectors; terahertz wave generation; channel geometry; field effect transistor; high quantizing magnetic field; terahertz detection; terahertz detector; terahertz emission; terahertz emitter; Detectors; FETs; Logic gates; Magnetic fields; Oscillators; Plasma temperature; Plasma waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612702
Filename
5612702
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