Direct extraction method of SOI MOSFET transistors parameters

Author

Raskin, J.P. ; Gillon, R. ; Vanhoenacker, D. ; Colinge, J.P.

Author_Institution

Lab. d´´Hyperfrequences, Univ. Catholique de Louvain, Belgium

fYear

1996

fDate

25-28 Mar 1996

Firstpage

191

Lastpage

194

Abstract

An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (R_G, R_D and R _S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit

Keywords

MOSFET; S-parameters; equivalent circuits; semiconductor device models; silicon-on-insulator; MOS transistors; S-parameters; SOI MOSFET parameters; Si; direct extraction method; equivalent circuit; extrinsic parameter values; intrinsic parameter values; scattering parameter measurements; small-signal model parameters; Delay; Electrical resistance measurement; Equivalent circuits; FETs; Frequency measurement; MOSFET circuits; Roentgenium; Scattering parameters; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535644

Filename

535644