Title :
Direct extraction method of SOI MOSFET transistors parameters
Author :
Raskin, J.P. ; Gillon, R. ; Vanhoenacker, D. ; Colinge, J.P.
Author_Institution :
Lab. d´´Hyperfrequences, Univ. Catholique de Louvain, Belgium
Abstract :
An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (RG, RD and R S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit
Keywords :
MOSFET; S-parameters; equivalent circuits; semiconductor device models; silicon-on-insulator; MOS transistors; S-parameters; SOI MOSFET parameters; Si; direct extraction method; equivalent circuit; extrinsic parameter values; intrinsic parameter values; scattering parameter measurements; small-signal model parameters; Delay; Electrical resistance measurement; Equivalent circuits; FETs; Frequency measurement; MOSFET circuits; Roentgenium; Scattering parameters; Silicon; Transconductance;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535644
