Title :
AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation
Author :
Giovine, E. ; Di Gaspare, Alessandra ; Ortolani, M. ; Evangelisti, F. ; Foglietti, V. ; Cetronio, A. ; Dominijanni, D. ; Lanzieri, C. ; Peroni, M. ; Doria, A. ; Giovenale, E. ; Spassovsky, I. ; Gallerano, G.P.
Author_Institution :
Ist. di Fotonica e Nanotecnol., CNR, Rome, Italy
Abstract :
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.
Keywords :
III-V semiconductors; aluminium compounds; frequency multipliers; gallium compounds; high electron mobility transistors; submillimetre wave amplifiers; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; THz frequencies; THz frequency multiplier; THz radiation detection; THz radiation generation; electron system; heterostructure transistors; integrated power source; submillimeter wave power amplifier; Aluminum gallium nitride; Couplings; Gallium nitride; HEMTs; Logic gates; MODFETs;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612705
