DocumentCode :
2714697
Title :
High-Linearity 60W Doherty Amplifier for 1.8GHz W-CDMA
Author :
Yamamoto, Takashi ; Kitahara, Takaya ; Hiura, Shigeru
Author_Institution :
Corporate Manuf. Eng. Center, Toshiba Corp., Yokohama
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
1352
Lastpage :
1355
Abstract :
In this paper, we describe the design of a 60-W Doherty amplifier at a frequency band of 1.8 GHz. The 60-W Doherty amplifier is composed of two 190-W continuous wave (CW) output power laterally diffused metal-oxide semiconductor (LDMOS) devices. To improve the linearity and efficiency of the 60-W Doherty amplifiers, the impedance matching circuits of the carrier amplifier and peaking amplifier were optimized using a high-frequency circuit design simulator and a system simulator. Experimental results using one-carrier wide-band code division multiple access (W-CDMA) signals achieved a 33% drain efficiency and a -36 dBc adjacent channel leakage power ratio (ACLR) at a 5-MHz offset in the frequency band range of 1844.9 MHz to 1879.9 MHz. The electrical performance for two-carrier W-CDMA signals was also measured. This is a report on the highest power of a Doherty amplifier at a frequency band of 1.8 GHz to the best of the authors´ knowledge
Keywords :
UHF power amplifiers; code division multiple access; impedance matching; integrated circuit design; 1.8 GHz; 1844.9 to 1879.9 MHz; 190 W; 60 W; Doherty amplifier; W-CDMA signals; carrier amplifier; continuous wave LDMOS devices; high-frequency circuit design simulator; impedance matching circuits; laterally diffused metal-oxide semiconductor devices; peaking amplifier; system simulator; wide-band code division multiple access; Broadband amplifiers; Circuit simulation; Frequency; Impedance matching; Linearity; MOS devices; Multiaccess communication; Power amplifiers; Power generation; Semiconductor optical amplifiers; Doherty amplifier; adjacent channel leakage power ratio (ACLR); laterally diffused metal-oxide semiconductor (LDMOS); wide-band code division multiple access (W-CDMA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249500
Filename :
4015176
Link To Document :
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