• DocumentCode
    2714697
  • Title

    High-Linearity 60W Doherty Amplifier for 1.8GHz W-CDMA

  • Author

    Yamamoto, Takashi ; Kitahara, Takaya ; Hiura, Shigeru

  • Author_Institution
    Corporate Manuf. Eng. Center, Toshiba Corp., Yokohama
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    1352
  • Lastpage
    1355
  • Abstract
    In this paper, we describe the design of a 60-W Doherty amplifier at a frequency band of 1.8 GHz. The 60-W Doherty amplifier is composed of two 190-W continuous wave (CW) output power laterally diffused metal-oxide semiconductor (LDMOS) devices. To improve the linearity and efficiency of the 60-W Doherty amplifiers, the impedance matching circuits of the carrier amplifier and peaking amplifier were optimized using a high-frequency circuit design simulator and a system simulator. Experimental results using one-carrier wide-band code division multiple access (W-CDMA) signals achieved a 33% drain efficiency and a -36 dBc adjacent channel leakage power ratio (ACLR) at a 5-MHz offset in the frequency band range of 1844.9 MHz to 1879.9 MHz. The electrical performance for two-carrier W-CDMA signals was also measured. This is a report on the highest power of a Doherty amplifier at a frequency band of 1.8 GHz to the best of the authors´ knowledge
  • Keywords
    UHF power amplifiers; code division multiple access; impedance matching; integrated circuit design; 1.8 GHz; 1844.9 to 1879.9 MHz; 190 W; 60 W; Doherty amplifier; W-CDMA signals; carrier amplifier; continuous wave LDMOS devices; high-frequency circuit design simulator; impedance matching circuits; laterally diffused metal-oxide semiconductor devices; peaking amplifier; system simulator; wide-band code division multiple access; Broadband amplifiers; Circuit simulation; Frequency; Impedance matching; Linearity; MOS devices; Multiaccess communication; Power amplifiers; Power generation; Semiconductor optical amplifiers; Doherty amplifier; adjacent channel leakage power ratio (ACLR); laterally diffused metal-oxide semiconductor (LDMOS); wide-band code division multiple access (W-CDMA);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249500
  • Filename
    4015176