A 6 to 16 GHz Linearized GaN Power Amplifier

Author

Katz, Allen ; Kubak, Michael ; DeSalvo, Gregory

Author_Institution

New Jersey Coll., Ewing, NJ

fYear

2006

fDate

11-16 June 2006

Firstpage

1364

Lastpage

1367

Abstract

This paper discusses a predistortion linearizer developed for use with multi-octave high power GaN amplifiers. This linearizer was produced as a GaN MMIC and displays useful characteristics over a frequency range from less than 4 GHz to greater than 20 GHz. It achieved more than an 8 dB improvement in C/I across the frequency range from 6 to 16 GHz with a 10 watt broadband MMIC GaN power amplifier. The authors believe this linearizer to be the first linearizer produced in GaN and also the widest band linearizer reported to date

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; wideband amplifiers; 6 to 16 GHz; GaN; MMIC amplifier; broadband power amplifier; predistortion linearizer; Broadband amplifiers; Frequency; Gallium nitride; Harmonic distortion; High power amplifiers; Intermodulation distortion; MMICs; Microwave amplifiers; Power amplifiers; Radiofrequency amplifiers; Amplifier distortion; MMIC power amplifiers; harmonic distortion; intermodulation distortion; microwave amplifiers; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249503

Filename

4015179