X-Band High-Power Microstrip AlGaN/GaN HEMT Amplifier MMICs

Author

van Raay, Friedbert ; Quay, R. ; Kiefer, R. ; Bronner, W. ; Seelmann-Eggebert, M. ; Schlechtweg, M. ; Mikulla, M. ; Weimann, G.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg

fYear

2006

fDate

11-16 June 2006

Firstpage

1368

Lastpage

1371

Abstract

This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substrate for X-band frequencies with output power levels well beyond 15 W. A dual-stage design supplies 18 dB of gain at 10 GHz with a pulsed output power of 20 W at V_DS= 40 V. Further, a single-stage MMIC with 6 mm gate width provides a P_-1dB of 14.5 W and a maximum output power of 22.4 W, also at 10 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; microstrip lines; silicon compounds; wide band gap semiconductors; 10 GHz; 14.5 W; 18 dB; 20 W; 22.4 W; 40 V; 6 mm; AlGaN-GaN-Si; HEMT amplifier; MMIC power amplifier; X-band amplifier; microstrip line; Aluminum gallium nitride; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microstrip; Power amplifiers; Power generation; Pulse amplifiers; Silicon carbide; GaN power amplifiers; MMIC; efficiency; microstrip;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249504

Filename

4015180