Title :
A quasi-three-dimensional analysis of ESD failure mechanism and a new ESD structure with rounded drain corner
Author :
Choi, Jae-Hoon ; Hong, IKyeong-Sun ; Koh, Yo-Hwan ; Lee, Gyoo-Yeong ; Kim, Han-Gu ; Yoon, Han-Sub
Author_Institution :
Memory Res. & Dev. Div., Hyundai Electron. Ind. Co. Ltd., Kyoungki-do, South Korea
Abstract :
A new quasi-three-dimensional analysis technique to verify the Electro-Static Discharge (ESD) failure mechanism in I/O circuitries and an optimized ESD structure with rounded drain corner are proposed and also verified by electro-thermal simulations and experiment. The proposed ESD structure eliminates the current crowding at the drain corner resulting in the dramatical reduction of the peak lattice temperature by more than 20%
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device models; semiconductor device reliability; semiconductor device testing; thermal analysis; 3D analysis; ESD failure mechanism; ESD immune structure; I/O circuitry; current crowding effect elimination; electro-thermal simulations; electrostatic discharge; nMOSFET; peak lattice temperature reduction; quasi-three-dimensional analysis; rounded drain corner; test structure; Breakdown voltage; Circuit testing; Electric breakdown; Electrodes; Electrostatic discharge; Failure analysis; Lattices; Medical simulation; Proximity effect; Temperature;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535647
