Processing characteristics of ion-chemical etching of single-crystal silicon by complex discharge plasma

Author

Bordusov, S.V.

Author_Institution

Belarus State Univ. of Informatics & Radioelectronics, Minsk, Belarus

fYear

2002

fDate

9-13 Sept. 2002

Firstpage

426

Lastpage

428

Abstract

Presented in this paper are the results of technological tests of the designed and manufactured discharge device. It is intended for plasma etching of materials, used in microelectronics. Reactive particles, formed in a complex (SHF and LF field) discharge, influence upon the material surface, which is the main feature of the treatment process. The experimental results demonstrated high quantitative and qualitative performances of the etching processes (in particular monocrystalline silicon etching) realized in the designed discharge device.

Keywords

elemental semiconductors; plasma materials processing; silicon; sputter etching; LF field discharges; RIE; SHF field discharges; Si; complex gas-discharge plasma; monocrystalline silicon etching; plasma etching; plasma materials processing; reactive ion etching; single-crystal silicon ion-chemical etching; Etching; Microelectronics; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Pulp manufacturing; Silicon; Surface discharges; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference

Print_ISBN

966-7968-12-X

Type

conf

DOI

10.1109/CRMICO.2002.1137300

Filename

1137300