DocumentCode
2715261
Title
Lanthanides application in planar technology of microwave devices production
Author
Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, Yu.N.
Author_Institution
Belarus State Univ., Minsk, Belarus
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
429
Lastpage
430
Abstract
It is shown that rare-earth doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by rare-earth elements (REE) as substrates for epitaxial layers allows the improvement of the stability of p-n junctions and MOS-structures to radiation effects.
Keywords
MIS structures; elemental semiconductors; erbium; holmium; leakage currents; lutetium; microwave devices; p-n junctions; radiation hardening (electronics); semiconductor device breakdown; semiconductor device measurement; semiconductor doping; silicon; MOS structure dielectric; MOSFET; REE epitaxial layer substrates; SHF-devices; Si:Er; Si:Ho; Si:Lu; breakdown voltage; leakage current; p-n junction stability; planar microwave device technology; radiation effects; rare-earth element doping; silicon lanthanide doping; Doping; Epitaxial layers; Microwave devices; Microwave technology; P-n junctions; Production; Radiation effects; Silicon; Stability; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137301
Filename
1137301
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