Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates

Author

Biber, Charlotte ; Morf, Thomas ; Benedickter, Hansruedi ; Lott, Urs ; Bachtold, Werner

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Eidgenossische Tech. Hochschule, Zurich, Switzerland

fYear

1996

fDate

25-28 Mar 1996

Firstpage

211

Lastpage

215

Abstract

Microwave frequency performance of silicon MOSFETs depends not only on the process but also on gate resistance and parasitic capacitances which are layout dependent. MOSFET transistors with different finger widths on a silicon epi-wafer have been measured from 50 MHz to 10 GHz. An equivalent circuit model of an optimum transistor layout for high frequency performance up to 10 GHz is presented

Keywords

MOSFET; S-parameters; elemental semiconductors; equivalent circuits; microwave field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; sensitivity analysis; silicon; substrates; 50 MHz to 10 GHz; MOSFETs; SHF; Si; equivalent circuit model; finger widths; gate resistance; low resistivity Si substrates; microwave frequency measurements; modeling; optimum transistor layout; parasitic capacitances; Electrical resistance measurement; Equivalent circuits; Fingers; Frequency measurement; MOSFETs; Microwave frequencies; Microwave measurements; Microwave transistors; Parasitic capacitance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535648

Filename

535648