• DocumentCode
    2715317
  • Title

    Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)

  • Author

    Miller, Drake A. ; Poocharoen, Panupat ; Forbes, Leonard

  • Author_Institution
    School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501, (541) 753-1409, prof@forbes4.com
  • fYear
    2007
  • fDate
    20-20 April 2007
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.
  • Keywords
    Computer science; Current distribution; Electron traps; Frequency domain analysis; Gaussian distribution; Gaussian noise; Signal analysis; Subthreshold current; Telegraphy; Threshold voltage; leakage current; memory retention time; subthreshold current; subthreshold models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on
  • Conference_Location
    Boise, ID, USA
  • Print_ISBN
    1-4244-1114-9
  • Electronic_ISBN
    1-4244-1114-9
  • Type

    conf

  • DOI
    10.1109/WMED.2007.368840
  • Filename
    4218991