DocumentCode
2715317
Title
Subthreshold Leakage Due to 1/F Noise and Rts(Random Telegraph Signals)
Author
Miller, Drake A. ; Poocharoen, Panupat ; Forbes, Leonard
Author_Institution
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501, (541) 753-1409, prof@forbes4.com
fYear
2007
fDate
20-20 April 2007
Firstpage
23
Lastpage
24
Abstract
An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.
Keywords
Computer science; Current distribution; Electron traps; Frequency domain analysis; Gaussian distribution; Gaussian noise; Signal analysis; Subthreshold current; Telegraphy; Threshold voltage; leakage current; memory retention time; subthreshold current; subthreshold models;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on
Conference_Location
Boise, ID, USA
Print_ISBN
1-4244-1114-9
Electronic_ISBN
1-4244-1114-9
Type
conf
DOI
10.1109/WMED.2007.368840
Filename
4218991
Link To Document