65GHz Doppler Sensor with On-Chip Antenna in 0.18μm SiGe BiCMOS

Author

Yao, Terry ; Tchoketch-Kebir, Lamia ; Yuryevich, Olga ; Gordon, Michael ; Voinigescu, Sorin P.

Author_Institution

EdwardS. Rogers Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.

fYear

2006

fDate

11-16 June 2006

Firstpage

1493

Lastpage

1496

Abstract

A single-chip 65GHz Doppler radar transceiver with on-chip patch antenna is reported. Implemented in a production 0.18mum SiGe BiCMOS process, it features a differential output transmit power of 4.3dBm, 16.5dB single-ended down-conversion gain and a double-sideband noise figure of 12.8dB. The radar includes a 65GHz 2-stage cascode LNA with S ₁₁<-15dB at 50-94GHz and 14dB gain at 65GHz, a double-balanced down-convert mixer, a SiGe HBT IF amplifier with low 1/f noise, a VCO and a 65GHz output buffer. The LO is provided by an integrated varactor-tuned 61-67GHz VCO optimized for low phase noise. The patch antenna is designed to be impedance-matched for dual-band operation at 62.8 and 64.6GHz. The use of lumped inductors in all blocks and a vertically-stacked transformer for single-ended to differential conversion in the receive path help reduce the transceiver area to 1mm times 1mm

Keywords

BiCMOS integrated circuits; Doppler radar; Ge-Si alloys; microstrip antennas; millimetre wave integrated circuits; transceivers; 0.18 micron; 1 mm; 1/f noise; 12.8 dB; 14 dB; 16.5 dB; 50 to 94 GHz; BiCMOS; Buffer; Doppler radar transceiver; Doppler sensor; HBT IF amplifier; LNA; SiGe; VCO; down-conversion; down-convert mixer; impedance-matching; integrated varactor; lumped inductors; microstrip antennae; millimeter wave integrated circuits; noise figure; on-chip patch antenna; phase noise; vertically-stacked transformer; BiCMOS integrated circuits; Doppler radar; Germanium silicon alloys; Noise figure; Patch antennas; Production; Radar antennas; Silicon germanium; Transceivers; Voltage-controlled oscillators; BiCMOS integrated circuits; Doppler radar; inductors; microstrip antennae; millimeter wave integrated circuits; transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249575

Filename

4015216