Title :
Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO3 Resistive Switching Memories
Author :
Fleck, Karsten ; Böttger, Ulrich ; Waser, Rainer ; Menzel, Stephan
Author_Institution :
Inst. of Mater. in Electr. Eng. & Inf. Technol. II, RWTH Aachen Univ., Aachen, Germany
Abstract :
In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 μs to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current- voltage characteristics.
Keywords :
radiation hardening (electronics); random-access storage; strontium compounds; titanium compounds; SET kinetics; SrTiO3; analytical model; bipolar switching; pulse analysis; resistive switching memories; single event transient; sweep analysis; time 1 mus to 1 s; Analytical models; Current measurement; Kinetic theory; Pulse measurements; Switches; Transient analysis; Voltage measurement; ReRAM; Resistive switching; SrTiO₃; SrTiO3; nonvolatile memory; switching kinetics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2340016
