Title :
A High 2LO-to-RF Isolation GaInP/GaAs HBT Sub-Harmonic Gilbert Mixer Using Three-Level Topology
Author :
Wu, Tzung-Han ; Meng, Chinchun ; Huang, Guo-Wei
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsin-Chu
Abstract :
A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (heterojunction bipolar transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP1dB is -18 dBm, IIP2 is 13 dBm and the IIP3 is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave mixers; 14.5 dB; 2.6 GHz; 5.2004 GHz; GaInP-GaAs; HBT; LO-to-RF isolation; downconversion Gilbert mixer; heterojunction bipolar transistor; subharmonic Gilbert mixer; CMOS technology; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Power harmonic filters; RF signals; Radio frequency; Resistors; Substrates; Topology; 2LO-to-RF Isolation; GaInP/GaAs HBT; Gilbert mixer; Self-mixing; Sub-harmonic mixer;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249578
