DocumentCode
2715445
Title
Quantum wire FET simulation
Author
Kvyatkevich, I.I. ; Obukhov, I.A.
Author_Institution
Interface Ltd., Moscow, Russia
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
455
Lastpage
457
Abstract
Presented in this paper are results of Quantum Wire Field Effect Transistor (QWFET) simulation. The influence of contact materials and dimensions on transistor characteristics is described.
Keywords
field effect transistors; quantum wires; contact material; numerical simulation; quantum wire field effect transistor; Current density; Effective mass; Electrons; Helium; IEEE catalog; Microwave FETs; Microwave technology; Organizing; Wire; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137313
Filename
1137313
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