Title :
Test structure for investigating activated doping concentrations in polycrystalline silicon
Author :
Moran, S. ; Hurley, P.K. ; Mathewson, A.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes
Keywords :
MOS capacitors; capacitance measurement; elemental semiconductors; semiconductor doping; silicon; MOSFET; Si; activated doping concentration; capacitance-voltage characteristics; depletion; dopant redistribution; double polysilicon capacitor; polycrystalline silicon; polysilicon gate; polysilicon/silicide bilayer; sub-micron CMOS silicidation; test structure; CMOS technology; Capacitance-voltage characteristics; Capacitors; Doping; MOSFETs; Microelectronics; Silicides; Silicon; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535649
