Test structure for investigating activated doping concentrations in polycrystalline silicon

Author

Moran, S. ; Hurley, P.K. ; Mathewson, A.

Author_Institution

Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland

fYear

1996

fDate

25-28 Mar 1996

Firstpage

217

Lastpage

220

Abstract

A new method for evaluating the active doping concentration in polycrystalline silicon (polysilicon) using a double polysilicon capacitor test structure is described. The technique is based upon the measured and theoretical capacitance-voltage characteristics of the structure. The results can provide further insight into the effect of depletion into the polysilicon gate of MOSFETs, as well as the effects of dopant redistribution in polysilicon/silicide bilayers used in sub-micron CMOS silicidation schemes

Keywords

MOS capacitors; capacitance measurement; elemental semiconductors; semiconductor doping; silicon; MOSFET; Si; activated doping concentration; capacitance-voltage characteristics; depletion; dopant redistribution; double polysilicon capacitor; polycrystalline silicon; polysilicon gate; polysilicon/silicide bilayer; sub-micron CMOS silicidation; test structure; CMOS technology; Capacitance-voltage characteristics; Capacitors; Doping; MOSFETs; Microelectronics; Silicides; Silicon; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on

Conference_Location

Trento

Print_ISBN

0-7803-2783-7

Type

conf

DOI

10.1109/ICMTS.1996.535649

Filename

535649