Title :
Transport properties of free carriers in semiconductors studied by THz time-domain magneto-optical spectroscopic ellipsometry
Author :
Kenichi, Yatsugi ; Matsumoto, Naoki ; Nagashima, Takeshi ; Hangyo, Masanori
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
Abstract :
We have developed a technique to deduce effective mass, density and scattering time of free carriers independently with each other by using THz time-domain magneto-optical spectroscopic ellipsometry. The derivation of these parameters for three undoped n-type InAs wafers of different carrier density are demonstrated.
Keywords :
III-V semiconductors; carrier density; effective mass; ellipsometry; indium compounds; magneto-optical effects; terahertz wave spectra; time resolved spectra; InAs; THz time-domain magnetooptical spectroscopic ellipsometry; carrier density; carrier scattering time; effective mass; free carriers; transport properties; undoped n-type InAs wafers; Charge carrier density; Dielectric measurements; Effective mass; Magnetic field measurement; Magnetic fields; Scattering; Semiconductor device measurement;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612753
