Title :
Calculation of drain-to-gate characteristics of single-electron structures
Author :
Abramov, I.I. ; Ignatenko, S.A. ; Novik, E.G.
Author_Institution :
Byelorussian State Univ. of Informatics & Radidelectronics, Minsk, Belarus
Abstract :
The two-dimensional numerical models of one- and two-island single-electron structures are modified to calculate their drain-to-gate characteristics. A comparison with experimental data is given for a transistor.
Keywords :
numerical analysis; semiconductor device models; single electron devices; single electron transistors; 2D numerical models; SET; drain-to-gate characteristics; one-island structures; single-electron structures; single-electron transistor; two-dimensional numerical models; two-island structures; Current-voltage characteristics; IEEE catalog; Informatics; Microwave technology; Numerical models; Organizing; Physics; Plasma welding; Single electron transistors; Tunneling;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137317
