DocumentCode
2715527
Title
Calculation of drain-to-gate characteristics of single-electron structures
Author
Abramov, I.I. ; Ignatenko, S.A. ; Novik, E.G.
Author_Institution
Byelorussian State Univ. of Informatics & Radidelectronics, Minsk, Belarus
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
466
Lastpage
467
Abstract
The two-dimensional numerical models of one- and two-island single-electron structures are modified to calculate their drain-to-gate characteristics. A comparison with experimental data is given for a transistor.
Keywords
numerical analysis; semiconductor device models; single electron devices; single electron transistors; 2D numerical models; SET; drain-to-gate characteristics; one-island structures; single-electron structures; single-electron transistor; two-dimensional numerical models; two-island structures; Current-voltage characteristics; IEEE catalog; Informatics; Microwave technology; Numerical models; Organizing; Physics; Plasma welding; Single electron transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137317
Filename
1137317
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