DocumentCode
2715547
Title
Two-dimensional numerical model of two-island single-electron structures
Author
Abramov, I.I. ; Ignatenko, S.A. ; Novik, E.G.
Author_Institution
Byelorussian State Univ. of Informatics & Radioelectronics, Minsk, Belarus
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
468
Lastpage
469
Abstract
The two-dimensional numerical models of two-island single-electron structures are developed. The model allows one to achieve good agreement with the experimental data. A comparison with results from other known models is also carried out. The proposed model has been included in the program complex for the simulation of multiple-tunnel junction single-electron devices MTJ-SET-NANODEV.
Keywords
numerical analysis; semiconductor device models; single electron devices; 2D numerical models; MTJ-SET-NANODEV; multiple-tunnel junction devices; simulation program; two-dimensional numerical models; two-island single-electron structures; Current-voltage characteristics; Helium; IEEE catalog; Microwave technology; Numerical models; Organizing; Poisson equations; Solid modeling; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137318
Filename
1137318
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