A 71.9% power-added-efficiency inverse Class-FLDMOS

Author

Allam-Ouyahia ; Duperrier, C. ; Tolant, C. ; Temcamani, F. ; Eudeline, Ph

Author_Institution

ENSEA-ECIME, Cergy-Pontoise

fYear

2006

fDate

11-16 June 2006

Firstpage

1542

Lastpage

1545

Abstract

Design and measured results of an inverse class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this one stage power amplifier demonstrate at 2dB power gain compression: 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse class F power amplifier

Keywords

MOSFET; UHF power amplifiers; 1 GHz; 13.2 W; 16 dB; 71.9 percent; LDMOS transistor; inverse class F power amplifiers; load impedance; power added efficiency; power gain compression; Design methodology; Frequency; Gain measurement; High power amplifiers; Impedance; Operational amplifiers; Performance gain; Power amplifiers; Power generation; Power measurement; Inverse Class-F; LDMOS; Power amplifiers; high efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249607

Filename

4015229