A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics

Author

Wang, L.S. ; Zhao, L.J. ; Pan, J.Q. ; Zhang, W. ; Wang, H. ; Liang, S. ; Zhu, H.L. ; Wang, W.

Author_Institution

Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

A new ECTT-DHPT with InGaAsP(lambda=1.55 mum) as base and InGaAsP(lambda=1.3 mum) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V_ce=1V) were obtained.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical waveguides; phototransistors; semiconductor heterojunctions; DC characteristics; InGaAsP; current 70 nA; dark current; edge-coupled two-terminal double heterojunction phototransistor; linear amplification operation; optoelectronic mix operation; voltage 1 V; waveguide; wavelength 1.3 mum; wavelength 1.55 mum; Absorption; Bandwidth; Heterojunctions; High speed optical techniques; Indium phosphide; Optical design; Optical materials; Optical receivers; Optical waveguides; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781481

Filename

4781481