• DocumentCode
    2715648
  • Title

    The effect of gamma-irradiation on the operating parameters of group III nitrides-based field effect transistors

  • Author

    Belyaev, A.E. ; Konakova, R.V. ; Petrychuk, M.V. ; Kurakin, A.M. ; Vitusevich, S.A. ; Klein, N. ; Danylyuk, S.V.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • fYear
    2002
  • fDate
    9-13 Sept. 2002
  • Firstpage
    484
  • Lastpage
    485
  • Abstract
    The influence of gamma ray irradiation on the properties of AlGaN/GaN based HEMTs has been investigated. It is shown that after being irradiated by gamma-quanta with a total dose of 109 rad the devices preserve their operational ability.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; gamma-ray effects; high electron mobility transistors; radiation hardening (electronics); semiconductor device measurement; semiconductor device noise; semiconductor device reliability; wide band gap semiconductors; 109 rad; AlGaN-GaN; gamma ray irradiation; gamma-quanta total dose; group III nitride-based field effect transistor operating parameters; irradiated AlGaN/GaN based HEMT; irradiated device noise sources; radiation hardness; FETs; Gallium nitride; HEMTs; Helium; IEEE catalog; MODFETs; Microwave devices; Organizing; Physics; Semiconductor device noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
  • Print_ISBN
    966-7968-12-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2002.1137324
  • Filename
    1137324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2715648