DocumentCode
2715692
Title
Numeric computation of proofness of inhomogeneous microstructure elements at the influence of power electromagnetic field [IC degradation]
Author
Starostenko, V.V. ; Rukavishnikov, A.V.
Author_Institution
Tavrical Nat. Univ., Simferopol, Russia
fYear
2002
fDate
9-13 Sept. 2002
Firstpage
490
Lastpage
491
Abstract
A procedure for the numerical calculation of the development of degradation processes in microstructure elements of integrated circuits by the action of electromagnetic fields is presented. The influence of conductive microstructure inhomogeneity parameters upon a threshold value of the electric intensity of an impinging electromagnetic wave is detected.
Keywords
electromagnetic fields; inhomogeneous media; integrated circuit modelling; integrated circuit reliability; radiation effects; IC inhomogeneous microstructure element degradation processes; conductive microstructure inhomogeneity parameters; impinging electromagnetic wave electric intensity threshold values; nonuniform metal-dielectric structures; powerful electromagnetic field effects; Degradation; Dielectrics; Electromagnetic diffraction; Electromagnetic fields; Electromagnetic modeling; Electrothermal effects; Integrated circuit modeling; Microstructure; Microwave technology; Nonuniform electric fields;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN
966-7968-12-X
Type
conf
DOI
10.1109/CRMICO.2002.1137327
Filename
1137327
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