DocumentCode
2715700
Title
Wafer-bonded Ge:Ga blocked-impurity-band far-infrared detectors
Author
Sawayama, Yoshihiro ; Doi, Yasuo ; Kurayama, Ryuji ; Higurashi, Eiji ; Patrashin, Mikhail ; Hosako, Iwao
Author_Institution
Univ. of Tokyo, Tokyo, Japan
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
We report a successful fabrication of a far-infrared blocked-impurity-band (BIB) detector. We achieve a clear boundary interface between an absorption layer and a blocking layer with a transition layer of 8 nm thick by bonding two discrete germanium wafers using surface activated bonding (SAB) technique. As the results, a good responsivity of ~7 A/W at 2 K has been achieved with extended cutoff wavelength compared to a conventional Ge:Ga photoconductor detector.
Keywords
elemental semiconductors; gallium; germanium; infrared detectors; photodetectors; wafer bonding; Ge:Ga; absorption layer; blocking layer; clear boundary interface; far infrared blocked impurity band detector; far infrared detector; photoconductor detector; surface activated bonding technique; temperature 2 K; wafer bonded blocked impurity band; wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612767
Filename
5612767
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