DocumentCode
2715761
Title
Silicon micromachining technology for THz applications
Author
Jung, C. ; Lee, C. ; Thomas, B. ; Chattopadhyay, G. ; Peralta, A. ; Lin, R. ; Gill, J. ; Mehdi, I.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
3
Abstract
Silicon micromachining technology is naturally suited for making THz components, where precision and accuracy are essential. We report here the development of a robust micromachining technology that has enabled us to make waveguide features in the 325 to 500 GHz range with nominal losses. Extension of this technology towards a wafer-level integrated submillimeter-wave receiver front-end is also discussed. This novel wafer-stacking architecture will enable ultra-compact two dimensional multi-pixel receiver front-ends in the THz range.
Keywords
micromachining; radiometers; surface roughness; surface topography measurement; terahertz wave devices; THz applications; silicon micromachining technology; ultra compact 2D multi-pixel receiver front-ends; wafer-level integrated submillimeter-wave receiver front-end; Metals; Micromachining; Receivers; Silicon; Surface roughness; Surface waves; Waveguide components;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612771
Filename
5612771
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