Title :
A test chip for the development of porous silicon light emitting diodes
Author :
Guardini, R. ; Bellutti, P. ; Pavesi, L. ; Soncini, G. ; Bisi, O.
Author_Institution :
INFM, Trento Univ., Italy
Abstract :
A test device to implement room temperature visible light emitting diodes (LED) based on porous silicon is reported. The device is obtained through a post processing electrochemical anodization of p-type Si wafers where n+-type stripes have been defined by lithography and doped by ion implantation
Keywords :
anodisation; elemental semiconductors; light emitting diodes; porous materials; semiconductor device testing; silicon; Si; electrochemical anodization; ion implantation doping; lithography; n+-type stripe; p-type Si wafer; porous silicon; room temperature visible light emitting diode; test chip; Degradation; Etching; Fabrication; Ion implantation; Light emitting diodes; Lithography; Materials testing; Schottky diodes; Silicon; Temperature;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535651
