• DocumentCode
    2715988
  • Title

    Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

  • Author

    Dominijanni, D. ; Casini, R. ; Foglietti, V. ; Ortolani, M. ; Notargiacomo, A. ; Lanzieri, C. ; Peroni, M. ; Romanini, P. ; Giovine, E.

  • Author_Institution
    CNR, Ist. di Fotonica e Nanotecnol., Rome, Italy
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes.
  • Keywords
    III-V semiconductors; Schottky barriers; electron beam lithography; etching; gallium arsenide; surface cleaning; terahertz waves; GaAs; diodes; etching; heterostructures; subTHz frequency; submicron Schottky contacts; surface cleaning; surface preparation; transistor gates; trilayer electron-beam lithography; wet chemical processes; Gallium arsenide; Logic gates; Resists; Schottky barriers; Surface cleaning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612783
  • Filename
    5612783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2715988