Title :
Semiconductor Laser Using Multimode Interference (MMI) Principle
Author :
Yin, Rui ; Teng, Jinghua ; Lin, Junhong ; Chua, Soojin
Author_Institution :
3 Res. Link, Inst. of Mater. Res. & Eng., Singapore
Abstract :
Multimode interference (MMI) structure is introduced in semiconductor laser to realize higher power and shorter device length. We use BPM simulation in the device design. MMI-LD was fabricated and realized in InGaAsP/InP based material and output power of up to 2.296 mW was achieved. The implemented MMI-LD exhibits stable single-mode output operating at a wavelength of 1.52 mum at 10degC. As a comparison, conventional semiconductor laser using straight waveguide is also fabricated in the same wafer and the output power is 0.534 mW. MMI-LD also shows better temperature tolerance due to the MMI wavelength selecting function.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; optical couplers; optical fabrication; semiconductor lasers; waveguide lasers; BPM simulation; InGaAsP-InP; InP; MMI coupler; MMI-LD fabrication; beam propagation method; laser diode; multimode interference principle; power 0.534 mW; power 2.296 mW; semiconductor laser; semiconductor material; single-mode output power; temperature 10 degC; temperature tolerance; wavelength 1.52 mum; wavelength selection function; Indium phosphide; Interference; Optical materials; Power generation; Power lasers; Semiconductor lasers; Semiconductor materials; Semiconductor waveguides; Temperature; Waveguide lasers;
Conference_Titel :
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-3901-0
Electronic_ISBN :
978-1-4244-2906-6
DOI :
10.1109/IPGC.2008.4781505
