DocumentCode
2716156
Title
Design of High-Brightness Tapered Lasers at 1060 nm Based on an Asymmetric Al-free Active Region Structure
Author
Odriozola, H. ; Tijero, J. M G ; Esquivias, I. ; Borruel, L. ; Martín-Mínguez, A. ; Michel, N. ; Calligaro, M. ; Lecomte, M. ; Parillaud, O. ; Krakowski, M.
Author_Institution
ETSI Telecomun., Univ. Politec. de Madrid, Madrid
fYear
2008
fDate
8-11 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
High brightness gain guided tapered lasers emitting at 1060 nm based on an asymmetric layer structure were designed, simulated and fabricated, demonstrating better beam quality than symmetric designs.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; InGaAsP; asymmetric aluminium-free active region structure; high-brightness gain guided tapered laser beams; optical fabrication; quantum well laser design; wavelength 1060 nm; Brightness; Laser beams; Laser feedback; Laser modes; Nonlinear optics; Optical design; Optical feedback; Power generation; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
Conference_Location
Singapore
Print_ISBN
978-1-4244-3901-0
Electronic_ISBN
978-1-4244-2906-6
Type
conf
DOI
10.1109/IPGC.2008.4781514
Filename
4781514
Link To Document