A CMOS RF power detector for an Automatic Impedance Matching System

Author

Richardson, François-Dominique ; Kouki, Ammar B. ; Gagnon, Ghyslain

Author_Institution

Ecole de Technol. Super., LACIME Lab., Montréal, QC, Canada

fYear

2011

fDate

26-29 June 2011

Firstpage

157

Lastpage

160

Abstract

This paper presents the design of a CMOS RF RMS power detector for an Automatic Impedance Matching System. The power detector requirements for this application, in terms of dynamic range, resolution, settling time and power consumption, are met by distributing the dynamic range over three power detection units. The appropriate unit is dynamically selected based on the input power range. The output of the detector is digital and linear-in-decibel. The selectors and detection units have been designed in 0.13-μm CMOS technology. Circuit-level simulation results show a dynamic range of 27 dB for input frequencies extending from 800 MHz to 8.5 GHz. The sensitivity of the power detector is -27 dBm, the settling time is less than 12 μs and the power consumption is 1.2 mW.

Keywords

CMOS digital integrated circuits; UHF integrated circuits; circuit simulation; electric sensing devices; field effect MMIC; impedance matching; power integrated circuits; CMOS RF power detector; CMOS technology; automatic impedance matching system; circuit-level simulation; digital output; dynamic range; frequency 800 MHz to 8.5 GHz; linear-in-decibel; power 1.2 mW; settling time; size 0.13 mum; CMOS integrated circuits; Detectors; Dynamic range; Impedance matching; Power demand; Radio frequency; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International

Conference_Location

Bordeaux

Print_ISBN

978-1-61284-135-9

Type

conf

DOI

10.1109/NEWCAS.2011.5981279

Filename

5981279