• DocumentCode
    2716173
  • Title

    Laser Trepan Drilling of Silicon in Air and under Water

  • Author

    Wee, L.M. ; Zheng, H.Y.

  • Author_Institution
    Singapore Inst. of Manuf. Technol., Singapore
  • fYear
    2008
  • fDate
    8-11 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Micromachining of silicon was conducted using 355 etam-X AVIA laser that generates laser fluence in the range of 2-7 Jcm-2. Laser ablation drilling tests were conducted on a silicon workpiece in air and under water. Low pulse frequency and high peak powers generate smaller spatter deposition area. At high pulse frequencies, the spatter distributed can be changed as the results of laser ejected material interaction. Focal plane positions of below the surface of 0.15 mm gave less number of scanning and produced relatively smaller areas of spatter deposition. Low scanning velocity generates smaller deposition area in comparison to higher scanning velocity. The differences between laser ablation in air and under water are identified.
  • Keywords
    drilling; elemental semiconductors; laser ablation; laser beam machining; laser beams; micromachining; silicon; underwater optics; AVIA laser; Si; focal plane position; laser ablation drilling test; laser ejected material interaction; laser trepan drilling; silicon micromachining; size 0.15 mm; spatter deposition; under water laser ablation; wavelength 355 nm; Drilling; Frequency; Laser ablation; Micromachining; Optical pulse generation; Optical pulses; Power generation; Pulsed laser deposition; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-3901-0
  • Electronic_ISBN
    978-1-4244-2906-6
  • Type

    conf

  • DOI
    10.1109/IPGC.2008.4781515
  • Filename
    4781515