A High-Linearity 5-bit, X-band SiGe HBT Phase Shifter

This work presents a fully-integrated, 5-bit, X-band phase shifter fabricated in a commercially-available 200 GHz silicon-germanium (SiGe) HBT BiCMOS technology. This SiGe phase shifter targets high-linearity for phased-array radar applications and utilizes a SiGe HBT single-pole, double-throw switch to select between high-pass and low-pass filter sections to generate the desired phase shift. The circuit achieves a 1-dB compression point of 4.4 dBm, and an input-referred third order intercept point of 18 dBm, while dissipating 248 mW from a 2.3 V supply. The absolute phase error of the shifter was less than +/- 15 degrees from 8 GHz to 12 GHz, with an average insertion loss of -16.2 dB