Title :
Kelvin test structure for measuring contact resistance of shallow junctions
Author :
Nanver, L.K. ; Goudena, E.J.G. ; Slabbekoorn, John
Author_Institution :
Inst. of Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Abstract :
A Kelvin contact resistance test structure has been developed for accurate and direct measurement of highly-doped shallow n+ and p+ junctions, which may be self-aligned to the contact window. The structure is easily integrated in many IC-processes. Results are presented for high-dose arsenic implantations, where excimer laser annealing of the contact windows yields contact resistivities below 10 -7 Ωcm2
Keywords :
contact resistance; electric resistance measurement; semiconductor junctions; IC process; Kelvin test structure; Si:As; contact resistance measurement; contact window; excimer laser annealing; high-dose arsenic implantation; self-aligned structure; shallow junction; Annealing; Automatic testing; Conductivity; Contact resistance; Electrical resistance measurement; Integrated circuit testing; Kelvin; Microelectronics; Quantum cascade lasers; Surface resistance;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535654
